次微米互補式金氧半場效電晶體直流特性的新二維解析模式

Abstract

本論文所探討的主題為金氧半場效電晶體元件的基本直流特性。我們主要 採取解析的觀點來研究由次微米元件上所提供的測量數據。n-型通道元件 與p-型通道元件被賦予同等的重視。論文中所涵蓋的重要議題包括 : (1) 金氧半場效電晶體元件中載子移動率的計測與模擬， (2) 臨界電壓 的研究，(3) 發展解析模式以計算元件電流，以及 (4)建立完整的理論作 為設計縮小化元件的依據。 In this thesis, the fundamental DC characteristics of complementary MOSFET's are investigated in detail. We mainly take the analytic approach to analyze and describe the measurement results obtained from the submicrometer MOS devices, and both n- and p-channel devices are equally emphasized without prejudice. The whole thesis covers the following topics which are extremely important for MOSFET's : (1) Characterization and modeling of the carrier mobilities in MOSFET, (2) Investigations on the threshold-voltage behaviors, (3) Calculations of the drain current, and (4) Scaling theory for the device of MOSFET's.