标题: 钛酸锆基介电薄膜的制程与基本特性之研究
Fabrication and Study of ZrTiO4-Based Dielectric Thin Films
作者: 张德安
De-An Chang
曾俊元, 林鹏
Tseung-Yuen Tseng, Pang Lin
电子研究所
关键字: 铁电性;介电薄膜;Ferroelectric; Dielectric thin film.
公开日期: 1994
摘要: 本论文主要研究探讨钛酸锆基介电薄膜的制程与薄膜基本特性其中包括以
溶胶-凝胶法备制铁电性 PLZT(8/65/35)薄膜与利用高频磁控式溅镀法备
制ZrTiO4介电薄膜。在以溶胶-凝胶法备制 PLZT薄膜实验中,以醋酸铅、
硝酸镧及锆钛的有机金属化合物为起始物,以2-甲氧基乙醇为溶剂,配制
成澄清的前驱物溶液,并利用旋转镀膜的方法在 Pt 基板上备制PLZT薄膜
。对于此薄膜制程的参数如;干燥控制添加剂(DCCA)的选择、烧结温度与
时间及升温速率均有详细的探讨。在利用高频磁控式溅镀法实验中,我们
采用自行设计组装的薄膜溅镀系统与自行配制的ZrTiO4材料作为靶材。首
度在低于 450 oC低温下沈积高品质的ZrTiO4介电薄膜。经由各种不同的
薄膜分析技术,分析其物理特性,光学特性、电学特性与机械性质等特性

This dissertation presents the depostion processes and physical
properties of ZrTiO4-based dielectric thin films in this
research, including the fabrication of PLZT ferroelectric thin
film by sol-gel spin coating and the preparation of ZrTiO4
dieletric thin film by RF magnetron sputtering method. In sol-
gel spin coating process, the precursor solution were formed by
mixing lead acetate hydrate,lanthanum nitrate hydrate,
zirconium n-propoxid and tetrabutylorthotitanate and
2-methoxyethanol as solvent was used. The effects of the drying
control chemical additives, annealing temperature and duration
on the qualities of the PLZT film were studied. Depostion of
ZrTiO4 thin film was carried out in a magnetron sputtering
system and the target (ZrTiO4 powder) preparated via solid-
state reaction. To our knowledge, it was the first time that
depostion of high quality dieletric ZrTiO4 thin films was
realized. The properties of ZrTiO4 thin film (such as physical,
electrical, optical and mechanical properties) were studied
utilizing various thin film analysis techniques.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT830430022
http://hdl.handle.net/11536/59206
显示于类别:Thesis