碳化矽及多矽氮化矽X光光罩鼓膜之研究

Abstract

本研究乃在研製碳化矽及多矽氮化矽X光微影術中所需之光罩鼓膜，其主 要目的在於建立低張力且具有較高X光及可見光之穿透率、強軔的機械強 度以及低輻射破壞之薄膜製程。其中以電子迴旋共振式電漿輔助化學氣相 沉積法，在300℃的溫度，利用之SiH4/CH4/H2/Ar混合氣體，在矽晶基板 上成功地長出微晶型碳化矽，而適合當作X光光罩鼓膜的低張力碳化矽薄 膜則可經由退火之後得到。另一方面我們也利用溫度從850℃到 900℃的 低壓化學氣相沉積法，成長多矽氮化矽在矽晶基板上，而為了獲得較好的 低張力的薄膜，我們也做了各種不同的氣體流量比之試驗並分析其特性。 對於薄膜表面粗糙度、勻稱性及X光之穿透率均在本研究中探討。 This thesis presents the experimental results of the study using silicon carbide (SiC) and silicon-rich nitride (SiN) as membrane for x-ray masks in technology of x-ray lithogrphy. The goal is to establish process which can produce low tensile stress films with high x-ray and optical transmittane, strong mechanical properties and low radiation damage. Microcrystalline silicon carbide (b-SiC) film was deposited on silicon substrate by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) utilizing SiH4/ CH4/H2/Ar mixtures at low temperature (300℃). Low tensile stress film wich is suitable as x-ray membrane can be achieved by annealing after silicon carbide film deposition. On the other hand, we deposited silicon-rich nitride (SiN) film on silicon substrate by low pressure chemical vapor deposition (LPCVD) at 850 ℃ to 900 ℃. In order to get low tensile stress film, different gas flow ratios were tested and characterized. Roughness, uniformity, optical and soft x-ray transmittance are reported.