標題: | Using Phosphorus-Doped alpha-Si Gettering Layers to Improve NILC Poly-Si TFT Performance |
作者: | Wang, Bau-Ming Wu, YewChung Sermon 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | Ni-metal-induced lateral crystallization (NILC);polycrystalline silicon (poly-Si) thin-film transistors (TFTs);Ni-gettering layers |
公開日期: | 1-二月-2010 |
摘要: | Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi(2) precipitates, thus degrading device performance. In this study, phosphorus-doped amorphous silicon (p-alpha-Si) and chemical oxide (chem-SiO(2)) films were used as Ni-gettering layers. After a gettering process, the Ni impurity within the NILC poly-Si film and the leakage current were both reduced, while the on/off current ratio was increased. This gettering process is compatible with NILC TFT processes and suitable for large-area NILC poly-Si films. |
URI: | http://dx.doi.org/10.1007/s11664-009-1027-5 http://hdl.handle.net/11536/5936 |
ISSN: | 0361-5235 |
DOI: | 10.1007/s11664-009-1027-5 |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 39 |
Issue: | 2 |
起始頁: | 157 |
結束頁: | 161 |
顯示於類別: | 期刊論文 |