低雜訊混成積體X頻帶高速載子電晶體介電質共振腔振盪器

Abstract

本論文提出兩種高速載子電晶體 X-band 介電質共振腔振盪器的設計、製 造及測量。我們以 LIBRA 微波模擬軟體分析電路組態後，設計了共源緩 衝和推推式兩個振盪電路並用混成微波積體電路的技術加以製造。測量兩 者的輸出功率都大於10 dBm，離載波頻率在100 KHz的相位雜訊皆小於 120dBc/Hz。而緩衝式振盪器的諧波失真小於 -20 dBc，且加上一級緩衝 放大器後可以改善負載推動效應以維持振盪頻率的穩定。 In this thesis, the low noise hybrid integrated X-band HEMT DROs' designs, fabrication, and measurements are presented. Two kinds of DRO circuit configurations are simulated by a microwave CAD tool, LIBRA, to predict the oscillation frequency in an efficiency manner. In our design, common-source configuration with capacitive series feedback is selected for their performance, and circuits are fabricated using hybrid microwave integrated circuit technology. The measured output power of these two DROs is larger than 10 dBm; the phase noise measured is less than -120 dBc/Hz at 100 kHz off the carrier frequency. The harmonic distortion of buffered DRO is also less than -20 dBc and the load pulling effect can be improved by adding the buffer amplifier.