亞胺基鈮錯化合物之合成及以化學氣相沉積法成長碳氮化鈮薄膜

Abstract

本實驗是以五氯化鈮為起始物,分別與 Alkyl-trimethylsilylamine 應, 合成 Alkylimido-trischloro-bispyridine niobium complexes, 再續 與 Lithium diethylamide 反應,合成 Alkylimido- tetrakis( diethylamido)niobium complexes。以正丙基亞胺基鈮錯化合物為單源前 驅物,以矽晶片為基材,沉積溫度在四百五十至六百五十度,經化學氣相沉 積法成長碳氮化鈮薄膜, The syntheses and characterization of organimidoniobium complexes are reported. N-propylimido-tetrakis(diethylamido) niobium was used as a singal source precursor to deposite thinms of NbCxNy by chemical vapor deposition. Deposition ofpolycrystalline thin films was carried out at- 650 C in cold wall reator.