以垂直布氏長晶法生長AgGaS2單晶及其性質研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	施惠紳	en_US
dc.contributor.author	Shi, Hui Shen	en_US
dc.contributor.author	張秉衡	en_US
dc.contributor.author	Zhang, Bing Heng	en_US
dc.date.accessioned	2014-12-12T02:14:11Z	-
dc.date.available	2014-12-12T02:14:11Z	-
dc.date.issued	1994	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT832159001	en_US
dc.identifier.uri	http://hdl.handle.net/11536/59663	-
dc.language.iso	en_US	en_US
dc.title	以垂直布氏長晶法生長AgGaS2單晶及其性質研究	zh_TW
dc.title	The growth and characterization of AgGaS2 single crystal by seeded vertical bridgman method	en_US
dc.type	Thesis	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
顯示於類別：	畢業論文