n型氮化鎵之金屬接觸及其金屬:半導體場效應電晶體之研製

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	郭瑞俊	en_US
dc.contributor.author	Guo, Rui Jun	en_US
dc.contributor.author	馮明憲	en_US
dc.contributor.author	Feng, Ming Xian	en_US
dc.date.accessioned	2014-12-12T02:14:12Z	-
dc.date.available	2014-12-12T02:14:12Z	-
dc.date.issued	1994	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT832159010	en_US
dc.identifier.uri	http://hdl.handle.net/11536/59674	-
dc.language.iso	en_US	en_US
dc.title	n型氮化鎵之金屬接觸及其金屬:半導體場效應電晶體之研製	zh_TW
dc.title	Metal contacts to n-type GaN and fabrication of MESFETs	en_US
dc.type	Thesis	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
顯示於類別：	畢業論文

APA	郭., Guo, R. Jun, 馮., & Feng, M. Xian (1994). n型氮化鎵之金屬接觸及其金屬:半導體場效應電晶體之研製. http://hdl.handle.net/11536/59674.
Bibtex	@article{郭瑞俊 and Guo1994, title={n型氮化鎵之金屬接觸及其金屬:半導體場效應電晶體之研製}, author={郭瑞俊 and Guo, Rui Jun and 馮明憲 and Feng, Ming Xian}, journal={http://hdl.handle.net/11536/59674}, year={1994}, url={https://ir.lib.nycu.edu.tw/handle/11536/59674?mode=full}, }