標題: | Improved performance and reliability for metal-oxide-semiconductor field-effect-transistor with fluorinated silicate glass passivation layer |
作者: | Hsieh, Chih-Ren Chen, Yung-Yu Lou, Jen-Chung 電機工程學系 Department of Electrical and Computer Engineering |
關鍵字: | fluorine;glass;hafnium compounds;MOSFET;passivation;permittivity;semiconductor device reliability;silicon compounds;tunnelling |
公開日期: | 11-一月-2010 |
摘要: | The superior characteristics of the fluorinated HfO(2)/SiON gate dielectric are investigated comprehensively. Fluorine is incorporated into the gate dielectric through fluorinated silicate glass (FSG) passivation layer to form fluorinated HfO(2)/SiON dielectric. Fluorine incorporation has been proved to eliminate both bulk and interface trap densities due to Hf-F and Si-F bonds formation, which can strongly reduce trap generation as well as trap-assisted tunneling during subsequently constant voltage stress, and results in improved electrical characteristics and dielectric reliabilities. The results clearly indicate that the fluorinated HfO(2)/SiON gate dielectric using FSG passivation layer becomes a feasible technology for future ultrathin gate dielectric applications. |
URI: | http://dx.doi.org/10.1063/1.3279140 http://hdl.handle.net/11536/5978 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3279140 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 96 |
Issue: | 2 |
結束頁: | |
顯示於類別: | 期刊論文 |