MOCVD成長GaAs太陽電池研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	葉庭弼	en_US
dc.contributor.author	YE, TING BI	en_US
dc.contributor.author	李威儀	en_US
dc.contributor.author	LI, WEI YI	en_US
dc.date.accessioned	2014-12-12T02:14:26Z	-
dc.date.available	2014-12-12T02:14:26Z	-
dc.date.issued	1994	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT834198002	en_US
dc.identifier.uri	http://hdl.handle.net/11536/59885	-
dc.description.abstract	實驗中使用有機金屬氣相磊晶法成長太陽電池結構,我們發現:製程設計良好與否對太陽電池的效率影響極大,我們並且針對表層厚度,柵狀電極的設計,底層載子濃度,鋁砷化鎵層作用,以及抗反射層的作用加以討論 We tried to construct GaAs Solar Cell by MOCVD and find that the process play an important role in the performance of a solar cell. We then discuss the effect of thickness of p-type layer, design of grid, carrier concentration of Base layer, AlGaAs window layer, and AR Coating.	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	砷化鎵	zh_TW
dc.subject	太陽電池	zh_TW
dc.subject	有機金屬氣相磊晶	zh_TW
dc.subject	物理	zh_TW
dc.subject	有機金屬氣相磊晶法	zh_TW
dc.subject	GaAs	en_US
dc.subject	Solar Cell	en_US
dc.subject	MOCVD	en_US
dc.subject	OMVPE	en_US
dc.subject	PHYSICS	en_US
dc.title	MOCVD成長GaAs太陽電池研究	zh_TW
dc.title	The research on gaAs solar cell grown by MOCVDzeng	en_US
dc.type	Thesis	en_US
dc.contributor.department	物理研究所	zh_TW
顯示於類別：	畢業論文