完整後設資料紀錄
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dc.contributor.author葉庭弼en_US
dc.contributor.authorYE, TING BIen_US
dc.contributor.author李威儀en_US
dc.contributor.authorLI, WEI YIen_US
dc.date.accessioned2014-12-12T02:14:26Z-
dc.date.available2014-12-12T02:14:26Z-
dc.date.issued1994en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT834198002en_US
dc.identifier.urihttp://hdl.handle.net/11536/59885-
dc.description.abstract實驗中使用有機金屬氣相磊晶法成長太陽電池結構,我們發現:製程設計良 好與否對太陽電池的效率影響極大,我們並且針對表層厚度,柵狀電極的設 計,底層載子濃度,鋁砷化鎵層作用,以及抗反射層的作用加以討論 We tried to construct GaAs Solar Cell by MOCVD and find that the process play an important role in the performance of a solar cell. We then discuss the effect of thickness of p-type layer, design of grid, carrier concentration of Base layer, AlGaAs window layer, and AR Coating.zh_TW
dc.language.isozh_TWen_US
dc.subject砷化鎵zh_TW
dc.subject太陽電池zh_TW
dc.subject有機金屬氣相磊晶zh_TW
dc.subject物理zh_TW
dc.subject有機金屬氣相磊晶法zh_TW
dc.subjectGaAsen_US
dc.subjectSolar Cellen_US
dc.subjectMOCVDen_US
dc.subjectOMVPEen_US
dc.subjectPHYSICSen_US
dc.titleMOCVD成長GaAs太陽電池研究zh_TW
dc.titleThe research on gaAs solar cell grown by MOCVDzengen_US
dc.typeThesisen_US
dc.contributor.department物理研究所zh_TW
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