質子佈植製作高功率0.85um寬面積雷射

Abstract

在本篇文章中，我們介紹以分子束磊晶和質子佈植所做的寬面積、波長 為0.85um的單量子井AlGaAs/GaAs半導體雷射。另外，在雷射兩個鏡面分 別鍍上抗反射和高反射的介電質薄膜，用以增加其單邊的光輸出功率。對 一個長1mm寬100um的共振腔而言，其臨界電流密度為230A/cm2而臨界電流 則為230mA。在2.5A的注入電流時，室溫輸出光的功率可達2瓦連續波操作 。其特性溫度T0在5~35C之間為139K,外部量子效率達0.72，內部損耗係數 為3.585cm-1。此雷射的表現以足可應用於商業的需求上。 In this thesis, we report the fabrication of broad area high power 0.85 um single quantum well AlGaAs/GaAs graded index separate confinement (GRINSCH SQW) lasers by proton implantation and molecular beam epitaxy techniques.Lasers withand without anti-reflection and high-reflection coating on the two facets arecompared. Low threshold current density of 230 A/cm2 and threshold current of230 A are obtained for a 100 um wide and 1 mm long cavity. At 2.5 A injection, laser output reaches 2 W at room temperature CW condition.The characteristic temperature T0 is 139K (5~35C), slope effiency is 1.06W/A , wall plug efficiency is 38% and the internal loss is 3.585cm-1. The thermal resistance ofpackaged device is 9.6 K/W. The performance of our lasers is comparable to thestate of art devices that is commerically available.