完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiou, Jin-Chern | en_US |
dc.contributor.author | Hung, Chen-Chun | en_US |
dc.contributor.author | Lin, Chun-Ying | en_US |
dc.contributor.author | Lin, Yung-Jiun | en_US |
dc.date.accessioned | 2014-12-08T15:07:40Z | - |
dc.date.available | 2014-12-08T15:07:40Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6032 | - |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.49.014201 | en_US |
dc.description.abstract | In this investigation, we present a two dimensional high aspect ratio XY stage, designed as an image stabilizer. This stabilizer is 8 x 8 x 0.75 mm(3), and sufficiently strong to support a suspended image sensor for anti-shaking photographic function. This stabilizer is fabricated by the silicon-on-glass (SOG) process including inductively coupled plasma reactive ion etching (ICP-RIE) processes, in which the anchor layer, pre-etching layer and structure layers are identified without an additional release step as is required in traditional silicon-on-insulator (SOI) wafer etching process. When an actuator is fabricated, flip-chip bonding is adopted to attach a 3 megapixel image sensor to this device. The longest calculated traveling distance of the stabilizer is 25 mu m and special stoppers are designed to prevent the actuator from moving out of range, and sticking to the side by pull-in phenomenon. Accordingly, the applied voltage at the 25 mu m moving distance is 84 V. Furthermore, the dynamic resonant frequency of the actuating device with an image sensor is 1.013 kHz. (C) 2010 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Design, Fabrication, and Actuation of Micro-Electro-Mechanical System-Based Image Stabilizer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.49.014201 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 49 | en_US |
dc.citation.issue | 1 | en_US |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:000275607900035 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |