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dc.contributor.authorSu, Nai-Chaoen_US
dc.contributor.authorWang, Shui-Jinnen_US
dc.contributor.authorHuang, Chin-Chuanen_US
dc.contributor.authorChen, Yu-Hanen_US
dc.contributor.authorHuang, Hao-Yuanen_US
dc.contributor.authorChiang, Chen-Kuoen_US
dc.contributor.authorWu, Chien-Hungen_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:07:41Z-
dc.date.available2014-12-08T15:07:41Z-
dc.date.issued2010en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/6048-
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.49.04DA12en_US
dc.description.abstractIn this study, we demonstrate the role of a titanium hafnium oxide (TiHfO) gate dielectric in improving the overall electronic performance of a ZnO thin-film transistor (TFT). Ti(x)Hf(1-x)O (x = 0.63) was fabricated by the rf co-sputtering technique. Using TiHfO as the gate dielectric, the device fabricated in this study exhibits a threshold voltage of 0.34 V, a subthreshold swing of 0.23 V/dec, a field-effect mobility of 2.1 cm(2) V(-1) s(-1), and an ON/OFF current ratio of 10(5). The small subthreshold swing and low positive threshold voltage are attributed to the higher value of kappa of 40 for the dielectric. This result enables device operation below 2 V, allowing its use in low-power driving circuits in display applications. (C) 2010 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleThe Role of High-kappa TiHfO Gate Dielectric in Sputtered ZnO Thin-Film Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.49.04DA12en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume49en_US
dc.citation.issue4en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000277301300012-
dc.citation.woscount2-
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