標題: 以有機金屬氣相磊晶法成長銻化銦/砷化鎵薄膜
Metalorganic Chemical Vapor Deposition Growth of InSb on GaAs
作者: 李淑娟
Lee, Shu-Chuan
陳衛國
Wei-Kuo Chen
電子物理系所
關鍵字: 有機金屬氣相磊晶法;銻化銦;砷化鎵;MOCVD;InSb;GaAs
公開日期: 1995
摘要: 本文主要探討以有機金屬氣相磊晶法(MOCVD)在砷化鎵(GaAs)基板上成長 銻化銦(InSb)薄膜 ,希望藉由銻化銦/砷化鎵的異質磊晶研究,充份了 解磊晶參數對成長銻化銦薄膜的影響。 這些參數包括磊晶溫度、反應物 分子源 V/III 比值、以及載流氫氣流量。實驗結果顯示, 在未刻意攙雜 雜質的情況下,所成長的銻化銦薄膜均呈 N-type。當磊晶溫度在 440℃ ~470 ℃時,銻化銦薄膜的磊晶成長主要由表面動力主導。磊晶溫度固定 在 460℃時,長晶速率約為 1.8 □m/hr 幾乎與 V/III 比值的變化 1.0~3.5 無關。由各種量測結果顯示,本實驗室所成長的最佳銻化銦薄膜 ,磊晶溫度為 460℃、V/III 比值為 2.5。此試片之雙晶X-ray 的半高寬 值為 590 arcsec、拉曼光譜中 TO/LO 比值約為 0.45、室溫載子遷移率 可達 18,600 cm2/V-s。 Metalorganic chemical vapor epitaxial growth of InSb on (100)GaAs substrate has been performed using trimethylindium (TMIn) and trimethylantimony (TMSb) as source precursors. These experiments were conducted in a growth temperature range from 440讈 to 470讈 and an input V/III gas ratio from 1.0 to 3.5. Experimental results show that the growth rate for InSb is surface-kinetic controlled in the above growth temperature region. The associated growth rate (~1.8 熤/hr @T=460讈) does not depend on the TMSb/TMIn ratio from 1.0 to 3.5. The optimum InSb film quality obtained in our system was carried out at 460讈 and V/III= 2.5. The resulted film has an x-ray rocking curve of 590 arcsec and a Hall mobility of 18,600 cm2/V-s at 300K.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT840429026
http://hdl.handle.net/11536/60588
顯示於類別:畢業論文