标题: | 深次微米互补式金氧半中静电放电与阿尔法粒子效应之研究 Electrostatic Discharge and Alpha Particle Upset in Deep Submicron CMOS |
作者: | 范宏政 Fan, Hung-Cheng 陈哲明 Chen Ming-Jer 电子研究所 |
关键字: | 静电放电;阿尔法粒子;electrostatic discharge;alpha particle |
公开日期: | 1995 |
摘要: | 本论文研究是利用晶格温度与光产生引入至二维混合式电路与元件模 拟来探讨在深次微米互补式金氧半中所关心的两个效应: 静电放电与阿尔 法粒子效应。首先,用一个闸流体做暂态与热特性分析来得到放电电流波 形、阳极电压波形、最高温度随时间变化与功率随时间变化。这些模拟结 果可让我们更清楚了解故障原因与阴阳极之间距为引发故障的重要因素。 在另一方面,我们针对圆柱型p-n接面、金氧半电晶体与动态记忆体单元 在不同入射能量、不同入射角度、不同偏压与不同杂质浓度来探讨阿尔法 粒子的效应。我们也做元件内部的电位分布来了解漏斗效应。更进一步的 ,推导一接面电流模型,此一公式对于不同入射能量与不同杂质浓度所模 拟之圆柱型p-n接面的电流波形相差不远。 Two-dimensional mixed-mode circuit and device simulation taking into account the lattice temperature as well as the photogeneration has extensively been performed to examine the two concerned issues in submicronCMOS: ESD (electrostatic discharge) and alpha particle upset. First, the transient and thermal behaviors of an SCR (Silicon Controlled Rectifier) ESD protection structure has been created in terms of the discharging current waveform, the anode voltage waveform, the paek temperature versus the time, and the power versus the time. These simulated results can provide more clear understanding of the origin causing the failure and have judged the anode-to- cathode spacing as the key factor determining the failure threshold. On the other hand, the effect of the effect of the alpha particle hit on a cylindrical p-n junction, a MOSFET, and a DRAM cell has been extensively simulated under different hit energies and angles, different biases, and different doping concentrations. Also demonstrated are the internal potential distributions showing clearing the funneling effetct. An analytic model has successfully reproduced the simulated current waveformsin a cylindrical p-n junction all at different hit energgies and differentdoping concentrations. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT840430020 http://hdl.handle.net/11536/60618 |
显示于类别: | Thesis |