标题: 深次微米互补式金氧半中静电放电与阿尔法粒子效应之研究
Electrostatic Discharge and Alpha Particle Upset in Deep Submicron CMOS
作者: 范宏政
Fan, Hung-Cheng
陈哲明
Chen Ming-Jer
电子研究所
关键字: 静电放电;阿尔法粒子;electrostatic discharge;alpha particle
公开日期: 1995
摘要: 本论文研究是利用晶格温度与光产生引入至二维混合式电路与元件模
拟来探讨在深次微米互补式金氧半中所关心的两个效应: 静电放电与阿尔
法粒子效应。首先,用一个闸流体做暂态与热特性分析来得到放电电流波
形、阳极电压波形、最高温度随时间变化与功率随时间变化。这些模拟结
果可让我们更清楚了解故障原因与阴阳极之间距为引发故障的重要因素。
在另一方面,我们针对圆柱型p-n接面、金氧半电晶体与动态记忆体单元
在不同入射能量、不同入射角度、不同偏压与不同杂质浓度来探讨阿尔法
粒子的效应。我们也做元件内部的电位分布来了解漏斗效应。更进一步的
,推导一接面电流模型,此一公式对于不同入射能量与不同杂质浓度所模
拟之圆柱型p-n接面的电流波形相差不远。
Two-dimensional mixed-mode circuit and device simulation
taking into account the lattice temperature as well as the
photogeneration has extensively been performed to examine the
two concerned issues in submicronCMOS: ESD (electrostatic
discharge) and alpha particle upset. First, the transient and
thermal behaviors of an SCR (Silicon Controlled Rectifier) ESD
protection structure has been created in terms of the
discharging current waveform, the anode voltage waveform, the
paek temperature versus the time, and the power versus the time.
These simulated results can provide more clear understanding of
the origin causing the failure and have judged the anode-to-
cathode spacing as the key factor determining the failure
threshold. On the other hand, the effect of the effect of the
alpha particle hit on a cylindrical p-n junction, a MOSFET, and
a DRAM cell has been extensively simulated under different hit
energies and angles, different biases, and different doping
concentrations. Also demonstrated are the internal potential
distributions showing clearing the funneling effetct. An
analytic model has successfully reproduced the simulated current
waveformsin a cylindrical p-n junction all at different hit
energgies and differentdoping concentrations.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT840430020
http://hdl.handle.net/11536/60618
显示于类别:Thesis