深次微米互補式金氧半中靜電放電與阿爾法粒子效應之研究

Abstract

本論文研究是利用晶格溫度與光產生引入至二維混合式電路與元件模 擬來探討在深次微米互補式金氧半中所關心的兩個效應: 靜電放電與阿爾 法粒子效應。首先，用一個閘流體做暫態與熱特性分析來得到放電電流波 形、陽極電壓波形、最高溫度隨時間變化與功率隨時間變化。這些模擬結 果可讓我們更清楚了解故障原因與陰陽極之間距為引發故障的重要因素。 在另一方面，我們針對圓柱型p-n接面、金氧半電晶體與動態記憶體單元 在不同入射能量、不同入射角度、不同偏壓與不同雜質濃度來探討阿爾法 粒子的效應。我們也做元件內部的電位分佈來了解漏斗效應。更進一步的 ，推導一接面電流模型，此一公式對於不同入射能量與不同雜質濃度所模 擬之圓柱型p-n接面的電流波形相差不遠。 Two-dimensional mixed-mode circuit and device simulation taking into account the lattice temperature as well as the photogeneration has extensively been performed to examine the two concerned issues in submicronCMOS: ESD (electrostatic discharge) and alpha particle upset. First, the transient and thermal behaviors of an SCR (Silicon Controlled Rectifier) ESD protection structure has been created in terms of the discharging current waveform, the anode voltage waveform, the paek temperature versus the time, and the power versus the time. These simulated results can provide more clear understanding of the origin causing the failure and have judged the anode-to- cathode spacing as the key factor determining the failure threshold. On the other hand, the effect of the effect of the alpha particle hit on a cylindrical p-n junction, a MOSFET, and a DRAM cell has been extensively simulated under different hit energies and angles, different biases, and different doping concentrations. Also demonstrated are the internal potential distributions showing clearing the funneling effetct. An analytic model has successfully reproduced the simulated current waveformsin a cylindrical p-n junction all at different hit energgies and differentdoping concentrations.