用於多層金屬連線的旋轉式塗佈低介電常數材料特性之研究

Abstract

隨著元件尺寸縮小, 進入深次微米領域, 元件速度主要受限於訊號 在金屬連線間傳送的時間長短.利用低介電材料降低電容,可有效降低訊號 延遲, 並且減少能量消耗.本篇論文針對三種低介電塗佈材料的特性做詳 細研究, 並將結果與傳統的塗佈材料比較. For deep submicron CMOS technology the speed of the devices is limited more by interconnect delay and less by intrinsic gate delay. Change in the dielectric materials to reduced capacitance is probably one of the bestapproach to interconnection delay, also to power disspation and crosstalk. this thesis presents the film characteristics, thermal stability, leakage current and stress variations of three type of low-k SOG. Experimental results are compared with those of a conventional SOG.