標題: | 多元素靶之蒙地卡羅噴濺模擬 Monte Carlo Simulation of Sputtering in Multicomponent Target |
作者: | 蔡文隆 Tsay, Wen-Long 郭雙發 Guo Shuang-Fa 電子研究所 |
關鍵字: | 蒙地卡羅;多元素靶;噴濺;模擬;質量效應;鍵結效應;Monte Carlo;multicomponent target;sputtering;simulation;mass effect;bonding effect |
公開日期: | 1995 |
摘要: | 吾人發展完成一種蒙地卡羅模擬程式, 可用來決定多元素靶如合金, 氧 化物, 矽化物 等在噴濺過程中各元素被噴濺出表面的產率. 並藉質量效 應及表面鍵結效應說明元素 被優先噴濺出的現像. 由於本程式採用各元 素依特性具不同鍵結能量, 較 TRIM 程式 採用各元素具相同鍵結能量更 能說明鍵結能量低者被優先噴濺出的現像. 在本程式中 主要採莫里耳及 ZBL 電位以及 LSS 電子阻擋模式, 其模擬結果與實驗值有良好一致 性. A Monte Carlo simulation program has been developed to calculate sputtering yields of multicomponent targets such as alloys, oxides and silicides. A preferential phenomenon has been studied by the effects of mass and bonding energy. The main difference between this work and TRIM is the model of surface bonding energy. In this program different component has different bonding energy in the multicomponent targets. In TRIM the same average surface bonding energy has been adopted for every component of the target. So it can be explained more easier that the component with lower surface bonding energy is preferred sputtering. In this work Moliere, ZBL interatomic potential and LSS electronic stopping have been adopted, the simulated results show good agreement with the experimental data. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT840430109 http://hdl.handle.net/11536/60717 |
顯示於類別: | 畢業論文 |