新的解析電荷幫浦電流模式及其創新的應用

Abstract

本論文針對電荷幫浦電流的傳統模式與實驗值間的差異提出一個等效的捕 捉截面模式，討論其物理機制，最後發展出一個新的解析電荷幫浦電流模 式，能準確模擬實驗的電荷幫浦電流。此外，我們利用電荷幫浦電流技術 ，發明了金氧半場效電晶體決定有效通道長度的測量方法。本方法比起傳 統的電流－電壓方法簡單、準確而且可靠，其準確度可達0.01μm 。我們 還提出一個新的電荷幫浦電流技術來量測水平方向的界面陷阱及氧化層的 等效被捕捉電荷的濃度分佈，可以應用在元件壽命的預測上。第一章介紹 電荷幫浦技術分析存在於矽及二氧化矽之間的界面陷阱的優點，第二章中 ，由Shockley-Read-Hall(SRH)的理論推導出另一個理想化的簡單解析電 荷幫浦電流模式，第三章中，利用電荷幫浦電流技術發明金氧半場效電晶 體決定有效通道長度之量測方法。 In this thesis, a new charge pumping current model is developed and the experimental charge pumping current can be simulated very well either in the suturation region or in the non- saturation region. The effective capture-cross -section models for electrons and holes are proposed and the possible physical mechanisms are discussed. Based on this model, several novel charge pumping techniques are developed. We have developed two novel methods to extract the effective channel length. Comparing to those using the I-V method, the proposed new method is simple, accurate and reliable. Besides, a novel charge-pumping method using DC source/drain biases and specified gate waveforms is proposed to extract the lateral distributions of interface-trap and effective oxide-trapped charge densities in this thesis and the analysis is the basis of hot-carrier lifetime prediction