標題: | 快速熱程序之溫度感測系統 Study of temperature sensing system of rapid thermal processing |
作者: | 呂政祐 ue, Jenq-Yow 宋開泰 Kai-Tai Song 電控工程研究所 |
關鍵字: | 快速熱程序;紅外線高溫計;半導體製造設備;放射率補償;溫度量測;rapid thermal processing;pyrometer;semiconductor manufacturing equipments;emissivity compensation;temperature measurement |
公開日期: | 1996 |
摘要: | 在本文中,我們對快速熱程序之溫度量測系統做了完整的研究,並針對紅 外線高溫計的感測技術,提出了放射率補償的方法,以能提供正確的溫度 給予控制系統做閉迴路的動態控制。我們首先進行快速熱程序在半導體製 造的技術分析,其關鍵技術在晶圓溫度之一致性與重現性之達成。為了發 展紅外線高溫計量測技術,我們在實驗室設立一套晶圓加溫與控溫設備, 並自行設置了紅外線高溫計量測系統。實驗結果顯示,我們所提出之放射 率補償設計可以有效降低因放射率變化所造成之量測誤差。 In this thesis, we surveyed the temperature sensing system of rapid thermalprocessing(RTP). The main problems of RTP are the uniformity and repeatability of wafer temperaturein the process of manufacturing. In order to overcome these problems, closed- loop temperature control of RTPsystem is required. The temperature sensing system is the key technology for control system design.We developed in this thesis a wafer temperature sensing system using infrared temperature sensor. A method for on-line emissivity compensation was proposed. Experimental resultsshow that our method can reduce the error caused by temperature dependent variation in emissivity effectively. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT850327054 http://hdl.handle.net/11536/61711 |
顯示於類別: | 畢業論文 |