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dc.contributor.authorLin, Chia-Shengen_US
dc.contributor.authorChen, Ying-Chungen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLi, Hung-Weien_US
dc.contributor.authorChen, Shih-Chingen_US
dc.contributor.authorJian, Fu-Yenen_US
dc.contributor.authorChuang, Ying-Shaoen_US
dc.contributor.authorChen, Te-Chihen_US
dc.contributor.authorChen, Yu-Chunen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.date.accessioned2014-12-08T15:07:50Z-
dc.date.available2014-12-08T15:07:50Z-
dc.date.issued2010en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/6171-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3483759en_US
dc.description.abstractIn this work, a mechanism of anomalous capacitance in p-channel low temperature polycrystalline silicon thin film transistors (LTPS TFTs) was investigated. In general, the effective capacitance of the LTPS TFTs was only dependent with the overlap area between the gate and source/drain under the off-state. However, the experimental results reveal that the off-state capacitance was increased with decreasing measurement frequency and/or with increasing measurement temperature. By fitting the curve of the drain current vs electric field under off-state region, it was verified that the trap-assisted gate-induced drain leakage (TAGIDL) consists of the Pool-Frenkel emission and thermal field emission. In addition, the charge density calculated from the C(gsd)-V(g) measurement also has the same dependence with electric field. This result demonstrates that the anomalous capacitance is mainly due to the TAGIDL. To suppress the anomalous capacitance, a band-to-band hot electron stress was utilized to reduce the vertical electric field between the gate and the drain. The electric field simulation was also performed by TCAD software. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3483759] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleAnalysis of Anomalous Capacitance Induced by TAGIDL in p-Channel LTPS TFTsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3483759en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume157en_US
dc.citation.issue11en_US
dc.citation.spageH1003en_US
dc.citation.epageH1007en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000283857900083-
dc.citation.woscount0-
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