標題: | Anomalous Capacitance Induced by GIDL in P-Channel LTPS TFTs |
作者: | Lin, Chia-Sheng Chen, Ying-Chung Chang, Ting-Chang Chen, Shih-Ching Jian, Fu-Yen Li, Hung-Wei Chen, Te-Chih Weng, Chi-Feng Lu, Jin Hsu, Wei-Che 光電工程學系 Department of Photonics |
關鍵字: | Displays;low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) |
公開日期: | 1-十一月-2009 |
摘要: | In this letter, a mechanism of anomalous capacitance in p-channel low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) was investigated. In general, the effective capacitance was only the overlap region and independent with the frequency in LTPS TFTs under the OFF state. However, our experimental results reveal that the capacitance was related with the leakage current and that it was dependent with the measurement frequencies when operated at the OFF-state region. The increase of the capacitance value is verified to be due to the increase of the electron capacitance originating from a gate-induced drain-leakage (GIDL) one. Nevertheless, the GIDL-induced electron capacitance can be suppressed by employing band-to-band hot electron stress. |
URI: | http://dx.doi.org/10.1109/LED.2009.2031504 http://hdl.handle.net/11536/6494 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2009.2031504 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 30 |
Issue: | 11 |
起始頁: | 1179 |
結束頁: | 1181 |
顯示於類別: | 期刊論文 |