標題: | Effect of CF(4) Plasma on Properties and Reliability of Metal-Induced Lateral Crystallization Silicon Transistors |
作者: | Chang, Chih-Pang Wu, YewChung Sermon 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-Jan-2010 |
摘要: | In this study, a CF(4) plasma etching treatment was applied to metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs). It was found that the electrical properties and reliability of the MILC poly-Si TFTs were improved by the treatment. The minimum off-state currents were also reduced. This is because this etching method involves not only passivating the trap states but also etching away the Ni-related defects on the top surface of MILC poly-Si. |
URI: | http://dx.doi.org/10.1149/1.3265989 http://hdl.handle.net/11536/6175 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.3265989 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 157 |
Issue: | 2 |
起始頁: | H192 |
結束頁: | H195 |
Appears in Collections: | Articles |