Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Chin-Ching | en_US |
dc.contributor.author | Chen, Yu-Wei | en_US |
dc.contributor.author | Chiang, Mei-Ching | en_US |
dc.contributor.author | Lee, Chia-Hua | en_US |
dc.contributor.author | Tung, Yung-Liang | en_US |
dc.contributor.author | Chen, San-Yuan | en_US |
dc.date.accessioned | 2014-12-08T15:07:50Z | - |
dc.date.available | 2014-12-08T15:07:50Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6176 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/1.3271100 | en_US |
dc.description.abstract | In this study, zinc oxide nanowires (ZnO NWs) coated with crystalline tin oxide (SnO(2)) by an ultrasonic spray pyrolysis were investigated. High resolution transmission electron microscopy analysis confirms that a continuous single SnO(2) layer of about 10 nm has been coated on the ZnO NWs. Photoconductivity measurements revealed that the ZnO NWs coated with the single uniform SnO(2) layer had a higher photoconductivity ratio by about a factor of 8 compared to the pristine ZnO NWs, attributed to the multi-photoexcited electrons. Under a steady radiation of UV light (lambda=325 nm), a substantial increase in the steady-state photocurrent is noticeable, suggesting that extra photoinduced charges are transferred from SnO(2) to ZnO NWs. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | II-VI semiconductors | en_US |
dc.subject | nanowires | en_US |
dc.subject | photoconductivity | en_US |
dc.subject | photoexcitation | en_US |
dc.subject | pyrolysis | en_US |
dc.subject | semiconductor quantum wires | en_US |
dc.subject | tin compounds | en_US |
dc.subject | transmission electron microscopy | en_US |
dc.subject | ultraviolet radiation effects | en_US |
dc.subject | wide band gap semiconductors | en_US |
dc.subject | zinc compounds | en_US |
dc.title | Photoconductive Enhancement of Single-Layer Tin Oxide-Coated ZnO Nanowires | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.3271100 | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 157 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | H227 | en_US |
dc.citation.epage | H230 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000273222700080 | - |
dc.citation.woscount | 10 | - |
Appears in Collections: | Articles |
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