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dc.contributor.authorLin, Chin-Chingen_US
dc.contributor.authorChen, Yu-Weien_US
dc.contributor.authorChiang, Mei-Chingen_US
dc.contributor.authorLee, Chia-Huaen_US
dc.contributor.authorTung, Yung-Liangen_US
dc.contributor.authorChen, San-Yuanen_US
dc.date.accessioned2014-12-08T15:07:50Z-
dc.date.available2014-12-08T15:07:50Z-
dc.date.issued2010en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/6176-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3271100en_US
dc.description.abstractIn this study, zinc oxide nanowires (ZnO NWs) coated with crystalline tin oxide (SnO(2)) by an ultrasonic spray pyrolysis were investigated. High resolution transmission electron microscopy analysis confirms that a continuous single SnO(2) layer of about 10 nm has been coated on the ZnO NWs. Photoconductivity measurements revealed that the ZnO NWs coated with the single uniform SnO(2) layer had a higher photoconductivity ratio by about a factor of 8 compared to the pristine ZnO NWs, attributed to the multi-photoexcited electrons. Under a steady radiation of UV light (lambda=325 nm), a substantial increase in the steady-state photocurrent is noticeable, suggesting that extra photoinduced charges are transferred from SnO(2) to ZnO NWs.en_US
dc.language.isoen_USen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectnanowiresen_US
dc.subjectphotoconductivityen_US
dc.subjectphotoexcitationen_US
dc.subjectpyrolysisen_US
dc.subjectsemiconductor quantum wiresen_US
dc.subjecttin compoundsen_US
dc.subjecttransmission electron microscopyen_US
dc.subjectultraviolet radiation effectsen_US
dc.subjectwide band gap semiconductorsen_US
dc.subjectzinc compoundsen_US
dc.titlePhotoconductive Enhancement of Single-Layer Tin Oxide-Coated ZnO Nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3271100en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume157en_US
dc.citation.issue2en_US
dc.citation.spageH227en_US
dc.citation.epageH230en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000273222700080-
dc.citation.woscount10-
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