標題: 電子迴旋共振電漿氧化成長閘極氧化層之應用及二氧化矽層的特性探討
The Study of Gate Oxides Grown by Electron Cyclotron Resonance Plasma Oxidation and the Characteristics of Silicon Dioxide Films
作者: 李啟弘
Li, Chii-Horng
張國明
Kow-Ming Chang
電子研究所
關鍵字: 電漿氧化;電漿預處理;舒緩現像;有紋路表面;穿隧氧化層;plasma oxidation;plasma pretreatment;relaxation phenomena;textured surface;tunnel oxide
公開日期: 1996
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT850428042
http://hdl.handle.net/11536/61909
顯示於類別:畢業論文