X光光罩圖形製作之研究

Abstract

本文主旨在X光微影技術中所需要X光光罩上圖形成形的研究,選擇的是以 鎢為X光吸收劑的材料.為了避免吸收劑在蝕刻過程中因薄膜應力過大而造 成圖案的扭曲或形變,我們歸納出最適合的濺鍍條件,使吸收劑具有很小之 應力變化. 在適當的蝕刻氣體混合比例與間歇操作條件下,也成功地蝕刻 出0.3微米 垂直側壁吸收劑的線寬. 最後,我們也在吸收劑上,針對更小線 寬的圖案,利用 電子束直寫之微影技術來討論近距效應之情形. It is the purpose of this thesis to develop the absorber patterning ofx-ray mask required in x-ray lithography. The tungsten film is adopted as absorbers. The satisfactory recipes for sputtering low-stress absorber were obtained to avoid distortion during the etching process. The 0.3 umpatterns were etched sucessfully with vertical sidewall by proper etchantproportions mixture intermittent process. Finally, we discuss the proximityeffect on the absorbers for fine line patterning in electron beam direct write lithography.