無線通訊應用之砷化鎵功率場效電晶體研製及微波電路設計

Abstract

本論文中﹐主要是研究無線通訊應用的砷化鎵功率元件製程､元件特 性及微波電路設計。我們研製完成雙delta摻雜砷化鋁鎵/砷化銦鎵/砷化 鎵高電子遷移率電晶體，此電晶體在3伏特操作電壓下，具有64%功率效率 及200 mW/mm輸出功率密度，適用於900 MHz先進移動式電話服務(AMPS)類 比式無線通訊系統。並研製完成工作電壓僅2.0伏特的雙delta摻雜砷化鋁 鎵/砷化銦鎵/砷化鎵高電子遷移率電晶體，此電晶體通過個人手攜式電 話(PHS)之pi/4-DQPSK標準，在1.9 GHz的中心頻率時，可產生20.2 dBm的 輸出功率及3%的功率效率。當輸出功率為19 dBm時，距中心頻率600 kHz 的臨近頻道功率(ACP)為-55.2 dBc。我們以直接離子佈植技術完成砷化鎵 功率金屬半導體場效電晶體，在900 MHz工作頻率及3伏特操作電壓下，此 電晶體之輸出功率為30 dBm，功率效率為65.7%，可應用於類比式無線通 訊系統。並完成2mm閘極寬度的直接離子佈植砷化鎵金屬半導體場效電晶 體。以PHS之pi/4-DQPSK標準信號測試，此電晶體在2.2伏特操作電壓時具 有21.3 dBm的輸出功率，57.2%功率效率，距1.9 GHz中心頻率600 kHz的 臨近頻道功率為-58 dBc。設計完成個人通訊系統(PCS)數位式寬頻無線通 訊功率模組，此功率模組在微波電路模擬時，在1.6 GHz至2.1 GHz的頻率 範圍內具有高達30 dB以上的S21增益。我們以深紫外光/電子束/深紫外光 三層光阻﹐研究發展電子束單次曝光及單次顯影的微影技術。並利用此技 術，完成0.15微米 T型閘極，以改善微波元件及微波電路在高頻應用之特 性。 We studied the fabrication process and characteristics of GaAs power devices and design of microwave circuits for wireless communication applications. Dual-delta-doped AlGaAs/InGaAs/GaAs power high electron mobility transistors (HEMT's) were developed. The HEMT operating at 3.0 V demonstrated a power- added efficiency of 64% and an output power density of 200 mW/ mm. The HEMT is suitable for the 900-MHz analog wireless communication systems, such as advanced mobile phone service (AMPS) systems. The 2.0-V-operation dual-delta-doped AlGaAs/ InGaAs/GaAs HEMT was also studied. When measured by PHS-standard pi/4-shifted quadrature phase shift keying (QPSK) modulated signals with a center frequency of 1.9 GHz, the HEMT demonstrated a power-added efficiency (PAE) of 45.3% and an output power density of 105 mW/mm. The adjacent channel leakage power (ACP) at 600 kHz apart from 1.9 GHz was -55.2 dBc at an output power (Pout) of 19 dBm. We developed GaAs power metal- semiconductor field-effect transistors (MESFET's) using direct ion implantation technology. The MESFET exhibited a Pout of 30 dBm and a power-added efficiency of 65.7% at a frequency of 900 MHz and an operating voltage of 3 V for analog wireless communication applications. When measured by PHS-standard pi/4- shifted QPSK modulated signals with a center frequency of 1.9 GHz, the MESFET operating at 2.2 V demonstrated a PAE of 57.2% and a Pout of 21.3 dB. The adjacent channel leakage power at 600 kHz apart from 1.9 GHz was -58 dBc. We designed a wide-band power amplifier module for advanced personal communication system (PCS) wireless communication applications. The simulation results exhibited that the power amplifier had a wide-band small-signal gain over 30 dB at a frequency range from 1.6 GHz to 2.1 GHz. We studied the single-step exposure and electron- beam lithography using a deep-UV/electron-beam/deep-UV (DUV/EB/ DUV) tri-layer resist system. A 150-nm T-shaped gate was developed by this technology to improve the high-frequency characteristics of microwave devices and circuits.