完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 蔡成宗 | en_US |
dc.contributor.author | Tsai, Cheng-Tzung | en_US |
dc.contributor.author | 褚德三 | en_US |
dc.contributor.author | Der-San Chuu | en_US |
dc.date.accessioned | 2014-12-12T02:17:39Z | - |
dc.date.available | 2014-12-12T02:17:39Z | - |
dc.date.issued | 1996 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#NT850429033 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/62069 | - |
dc.description.abstract | 本論文主要用是利用脈衝式雷射蒸度法及濺鍍法製作CdMnS及ZnMnSe薄膜 並探討其物理特性 This dissertation contains two main parts : thin films preparation and physical properties analysis.The first part is devoted to the studies on the thin films preparation of CdS, ZnSe, CdMnS, and ZnMnSe; the second part is devoted to the studies on the physical II-VI compound and diluted amgnetic semiconductor. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 濺鍍 | zh_TW |
dc.subject | 拉曼光譜 | zh_TW |
dc.subject | 光激冷光 | zh_TW |
dc.subject | sputter | en_US |
dc.subject | Raman spectra | en_US |
dc.subject | PL | en_US |
dc.title | 硫化錳鎘與硒化錳鋅薄膜製作及其特性研究 | zh_TW |
dc.title | Fabrication and physical properties of CdMnS and ZnMnSe thin films. | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 電子物理系所 | zh_TW |
顯示於類別: | 畢業論文 |