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dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorHuang, C. C.en_US
dc.contributor.authorHsu, H. H.en_US
dc.contributor.authorChen, P. C.en_US
dc.contributor.authorChiang, K. C.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorYeh, F. S.en_US
dc.date.accessioned2014-12-08T15:07:53Z-
dc.date.available2014-12-08T15:07:53Z-
dc.date.issued2010-01-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3491490en_US
dc.identifier.urihttp://hdl.handle.net/11536/6210-
dc.description.abstractIn this article, we investigate the frequency-dependent voltage nonlinearity effect of high-kappa Ni/SrTiO(3)/TaN and TaN/SrTiO(3)/TaN radio-frequency (rf) metal-insulator-metal (MIM) capacitors by electrical and thermal stresses. The experimental results demonstrated that the MIM-related capacitance properties, dependence of voltage and frequency, are not only affected by intrinsic dielectric properties but also shared by extrinsic effect, which possibly originated from the oxygen vacancies or electrode polarization. The high work-function Ni electrode can prevent the frequency-dependent voltage coefficient of capacitance characteristics from deterioration under the high temperature or continued voltage-stressing environments. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3491490] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleA Study on Frequency-Dependent Voltage Nonlinearity of SrTiO(3) rf Capacitoren_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3491490en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume13en_US
dc.citation.issue12en_US
dc.citation.spageH436en_US
dc.citation.epageH439en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
Appears in Collections:Articles