標題: | High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Application |
作者: | Hu, Chih-Wei Chang, Ting-Chang Tu, Chun-Hao Huang, Yu-Hao Lin, Chao-Cheng Chen, Min-Chen Huang, Fon-Shan Sze, Simon M. Tseng, Tseung-Yuen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-2010 |
摘要: | We propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO(2) pellets. An 800 degrees C rapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5x10(12) cm(-2). Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance-voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO(2) dielectric layer. Moreover, related reliability characteristics have been extracted. |
URI: | http://dx.doi.org/10.1149/1.3271023 http://hdl.handle.net/11536/6211 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.3271023 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 13 |
Issue: | 3 |
起始頁: | H49 |
結束頁: | H51 |
顯示於類別: | 期刊論文 |