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dc.contributor.authorHu, Chih-Weien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTu, Chun-Haoen_US
dc.contributor.authorHuang, Yu-Haoen_US
dc.contributor.authorLin, Chao-Chengen_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorHuang, Fon-Shanen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:07:53Z-
dc.date.available2014-12-08T15:07:53Z-
dc.date.issued2010-01-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3271023en_US
dc.identifier.urihttp://hdl.handle.net/11536/6211-
dc.description.abstractWe propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO(2) pellets. An 800 degrees C rapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5x10(12) cm(-2). Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance-voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO(2) dielectric layer. Moreover, related reliability characteristics have been extracted.en_US
dc.language.isoen_USen_US
dc.titleHigh Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3271023en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume13en_US
dc.citation.issue3en_US
dc.citation.spageH49en_US
dc.citation.epageH51en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
Appears in Collections:Articles