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dc.contributor.author陳基生en_US
dc.contributor.authorChan, Ji-Shengen_US
dc.contributor.author張志揚en_US
dc.contributor.authorChi-Yang Changen_US
dc.date.accessioned2014-12-12T02:17:46Z-
dc.date.available2014-12-12T02:17:46Z-
dc.date.issued1996en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT850436044en_US
dc.identifier.urihttp://hdl.handle.net/11536/62121-
dc.description.abstract本論文主要是在描述以FET製成的被動式混頻器(或稱電阻性混頻器)的 表現。其內容包 含了: (1)微帶線結構完成50MHZ的IF輸出頻率; (2)微帶線結構完成750MHZ的IF輸出頻率; (3)共平面式結構完成750MHZ的IF輸出頻率。 再分別測量其轉頻耗損(Conversion Loss),隔絕性(Isolation), 雜訊指數(Noise figure),輸入端1dB壓縮點(Input 1dB compress point)等重要參數然後進行比較其性能。 The paper describes performances of three broadband singly- balanced mixer using resistive FET. It contains mixers made by (1) Microstrip line structure with its IF outputs 50MHZ; (2) Microstrip line structure with its IF outputs 750MHZ; (3) Coplanar line structure with its IF outputs 750MHZ. We will measure the conversion loss, isolation, noise figure, input 1dB compress point and so on important parameters for each one and compare their performances.zh_TW
dc.language.isozh_TWen_US
dc.subject混頻器zh_TW
dc.subject單平衡式zh_TW
dc.subject場效電晶體zh_TW
dc.subjectMixeren_US
dc.subjectSingly-Balanceden_US
dc.subjectFETen_US
dc.title使用電阻性場效電體製作寬頻單平衡式混頻器zh_TW
dc.titleBroadband Singly-Balanced Mixer Using Resistive FETsen_US
dc.typeThesisen_US
dc.contributor.department電信工程研究所zh_TW
顯示於類別:畢業論文