磷化銦蕭基二極體之製備與特性量測

Abstract

In this thesis, we investigated the electrical characterization of InP Schottkydiodes. The methods applied to improve the characterization of Schottky diodeswere to use MIS diodes structure with PxNy deposited on InP substrates and conventional MS diode structure but processed at low temperature 77K. I-V andC-V measurements were performed to characterize the devices. For MIS Schottkydiode [Au/PxNy(40A)/n-InP], the saturation current density is 3.3*e-7 A/cm2,the barrier height is 0.74eV, and the ideality factor is 1.24. For MS Schottkydiode [Au/n-InP] fabricated at low temperature, the saturation current densityis 1.6*e-7 A/cm2, the barrier height is 0.76eV, and the ideality factor is 1.2.The barrier height of Schottky diodes fabricated by these two processes are 0.24~0.26eV higher than that of MS [Au/n-InP] Schottky diodes fabricated at room temperature. In addition, we heated the samples to 250C~300C for 4 minutesto study the temperature effect on the Schottky diodes. Lower barrier, smallerideality factor, and internal resistance were found and were attributed to theeffect of the annealing process on these such prepared Schottky diodes.