| 標題: | 角狀懸浮閘之快閃式記憶體特性及可靠性研究 = A study on the performance and relability of flash cell with horn-shaped floating gate |
| 作者: | 蔣富成 黃調元 電子研究所 |
| 公開日期: | 1996 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT856430123 http://hdl.handle.net/11536/62560 |
| Appears in Collections: | Thesis |
- A study on the radiation hardness of flash cell with horn-shaped floating-gate / Huang, TY;Jong, FC;Chao, TS;Lin, HC;Leu, LY
- Improving radiation hardness of EEPROM/flash cell by N2O annealing / Huang, TY;Jong, FC;Chao, TS;Lin, HC;Leu, LY
- Effects of floating-gate doping concentration on flash cell performance / Huang, TY;Jong, FC;Lin, HC;Chao, TS;Leu, LY
- A study on the radiation hardness of flash cell with horn-shaped floating-gate / Huang, TY;Jong, FC;Chao, TS;Lin, HC;Leu, LY
- 不同浮動閘極材料P通道快閃記憶體性能與可靠性之改進 / 蔡皓偉;Hao-Wei Tsai;莊紹勳;Steve S. Chung
- The performance and reliability enhancement of ETOX P-channel flash EEPROM cell with P-doped floating-gate / Tsai, HW;Chiang, PY;Chung, SS;Kuo, DS;Liang, MS
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