标题: | Design of 2xVDD-tolerant mixed-voltage I/O buffer against gate-oxide reliability and hot-carrier degradation |
作者: | Tsai, Hui-Wen Ker, Ming-Dou 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 1-一月-2010 |
摘要: | A new 2xVDD-tolerant mixed-voltage I/O buffer circuit, realized with only 1xVDD devices in deep-submicron CMOS technology, to prevent transistors against gate-oxide reliability and hot-carrier degradation is proposed. The new proposed 2xVDD-tolerant I/O buffer has been designed and fabricated in a 0.13-mu m CMOS process with only 1.2-V devices to serve a 2.5-V/1.2-V mixed-voltage interface, without using the additional thick gate-oxide (2.5-V) devices. This 2xVDD-tolerant I/O buffer has been successfully confirmed by simulation and experimental results with operating speed up to 133 MHz for PCl-X compatible applications. (C) 2009 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.microrel.2009.09.004 http://hdl.handle.net/11536/6273 |
ISSN: | 0026-2714 |
DOI: | 10.1016/j.microrel.2009.09.004 |
期刊: | MICROELECTRONICS RELIABILITY |
Volume: | 50 |
Issue: | 1 |
起始页: | 48 |
结束页: | 56 |
显示于类别: | Articles |
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