標題: InGaN-GaN Light Emitting Diode Performance Improved by Roughening Indium Tin Oxide Window Layer via Natural Lithography
作者: Liao, Cheng
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2010
摘要: A simple natural lithography process was employed to roughen the indium tin oxide (ITO) window layer to improve the performance of an InGaN-GaN light emitting diode (LED). In this process, a photoresist layer was used as a mask for inductively coupled plasma (ICP) dry etching. The photoresist was distorted during the ICP etching process. As the etching time increased, the distorted shapes of the photoresist were transferred to the ITO surface. The roughness of the ITO surface can be easily controlled by the thickness of the photoresist mask. Moreover, the performance of LEDs increased with the thickness of the photoresist mask. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3257601] All rights reserved.
URI: http://hdl.handle.net/11536/6300
http://dx.doi.org/10.1149/1.3257601
ISSN: 1099-0062
DOI: 10.1149/1.3257601
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 13
Issue: 1
起始頁: J8
結束頁: J10
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