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dc.contributor.author鄭凱方en_US
dc.contributor.authorCheng, Kai-Fangen_US
dc.contributor.author張志揚en_US
dc.contributor.authorChang Chi-Yangen_US
dc.date.accessioned2014-12-12T02:18:59Z-
dc.date.available2014-12-12T02:18:59Z-
dc.date.issued1997en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT860435028en_US
dc.identifier.urihttp://hdl.handle.net/11536/63049-
dc.description.abstract在這份論文中﹐是發展一種叫做TRL(穿透、 線段、反射)去埋藏法的 方法。 去埋藏法的理論包含三種基本S-參數量測的架構﹐即穿透、線段 、反射和一個元件的S-參數的量測。 這個FORTRAN程式就是在TRL去埋藏 法的理論基礎下所發展出來的。測試一顆NEC71000 MESFET來確認這程式 的正確性。 做完去埋藏法後所取得元件資料非常接近NEC公司所提供的元 件資料。 利用去埋藏法作共平面波導不連續面上的量測,可以得到反 射係數,利用這個反射係數我們做了共平面波導的短路端的量測並用HP seriesIV分析其等效。 In this thesis, a so-called TRL (Through, Line, Reflection) de-embedding method is developed. The method of de-embedding includes 3 basic structure S-parameter measurements, namely, through, line and reflection, and one device S-parameter measurement. A FORTRAN program based on TRL de-embedding theory is developed. An NEC71000 MESFET is tested to verify the validity of the program. The de-embedded data are very close to the data from NEC data sheet. The program can also provide reflection coefficient data of any kind of line discontinuities such as open-end and short-end. We utilize this method to make a CPW open-end and short-end measurements, and uses HP series to model the equivalent circuits.zh_TW
dc.language.isozh_TWen_US
dc.subject去埋藏法zh_TW
dc.subject微波探針量測zh_TW
dc.subject穿透 線段 反射 法zh_TW
dc.subjectde-embeden_US
dc.subjectmicrowave probe measurementen_US
dc.subjectTRL methoden_US
dc.title穿透、線段、反射去埋藏法的方法zh_TW
dc.titleTRL De-embedding Methoden_US
dc.typeThesisen_US
dc.contributor.department電信工程研究所zh_TW
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