完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 鄭凱方 | en_US |
dc.contributor.author | Cheng, Kai-Fang | en_US |
dc.contributor.author | 張志揚 | en_US |
dc.contributor.author | Chang Chi-Yang | en_US |
dc.date.accessioned | 2014-12-12T02:18:59Z | - |
dc.date.available | 2014-12-12T02:18:59Z | - |
dc.date.issued | 1997 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#NT860435028 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/63049 | - |
dc.description.abstract | 在這份論文中﹐是發展一種叫做TRL(穿透、 線段、反射)去埋藏法的 方法。 去埋藏法的理論包含三種基本S-參數量測的架構﹐即穿透、線段 、反射和一個元件的S-參數的量測。 這個FORTRAN程式就是在TRL去埋藏 法的理論基礎下所發展出來的。測試一顆NEC71000 MESFET來確認這程式 的正確性。 做完去埋藏法後所取得元件資料非常接近NEC公司所提供的元 件資料。 利用去埋藏法作共平面波導不連續面上的量測,可以得到反 射係數,利用這個反射係數我們做了共平面波導的短路端的量測並用HP seriesIV分析其等效。 In this thesis, a so-called TRL (Through, Line, Reflection) de-embedding method is developed. The method of de-embedding includes 3 basic structure S-parameter measurements, namely, through, line and reflection, and one device S-parameter measurement. A FORTRAN program based on TRL de-embedding theory is developed. An NEC71000 MESFET is tested to verify the validity of the program. The de-embedded data are very close to the data from NEC data sheet. The program can also provide reflection coefficient data of any kind of line discontinuities such as open-end and short-end. We utilize this method to make a CPW open-end and short-end measurements, and uses HP series to model the equivalent circuits. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 去埋藏法 | zh_TW |
dc.subject | 微波探針量測 | zh_TW |
dc.subject | 穿透 線段 反射 法 | zh_TW |
dc.subject | de-embed | en_US |
dc.subject | microwave probe measurement | en_US |
dc.subject | TRL method | en_US |
dc.title | 穿透、線段、反射去埋藏法的方法 | zh_TW |
dc.title | TRL De-embedding Method | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 電信工程研究所 | zh_TW |
顯示於類別: | 畢業論文 |