砷化鎵高速元件積體電路之金屬鑲嵌銅製程

Abstract

本研究將使用在矽製程上已相當成熟的金屬鑲嵌技術運用於砷化鎵(GaAs)及磷化銦(InP)基材之銅金屬化製程中，驗證其可行性。實驗首先在砷化鎵基板上沉積完成介電質層後，即以兩道黃光微影製程定義出中介窗和溝渠的區域，且分別以RIE作不同深度之乾式蝕刻，再用銅電鍍的方式鍍上銅金屬，最後以化學機械研磨技術進行表面平坦化並以SEM檢視其金屬導線結構。本研究已將金屬鑲嵌技術運用在三五族化合物半導體之銅金屬連線製程上，並討論此技術在三五族化合物半導體元件上的應用及研發重點。

The research was focused on application of well-developed metal damascene to copper microfabrication on GaAs and InP substrates and also verification of feasibility. The fabrication began with deposition of specific dielectric material on a GaAs substrate followed by two-masked photolithography to define vias and trenches. Subsequently, we used RIE to etch patterns to different depths and then electroplated copper with CMP planarization following by SEM inspection of metal interconnects. The research had applied metal damascene to fabrication of copper interconnects in III-VA semiconductor devices.