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dc.contributor.author于世珩en_US
dc.contributor.authorYu, Shi-Hanen_US
dc.contributor.author謝正雄en_US
dc.contributor.author黃凱風en_US
dc.contributor.authorShie, Jin-Shownen_US
dc.contributor.authorHuang, Kai-Fengen_US
dc.date.accessioned2014-12-12T02:19:28Z-
dc.date.available2014-12-12T02:19:28Z-
dc.date.issued1997en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT863429011en_US
dc.identifier.urihttp://hdl.handle.net/11536/63429-
dc.description.abstract本論文欲以矽之異方性蝕刻技術,在矽晶片上製作一種具有四十 五度斜面之W型槽,並利用氧化犧牲法,使斜面更平整達光學程度。 在此結構上黏置邊射型半導體雷射,使其達到垂直發射的功能。此種 垂直發射的結構十分簡化雷射的包裝方式及成本。zh_TW
dc.description.abstractThis thesis is to study a novel technology of the fabrication of a vertical emitting semiconductor laser. This technique is a combination of an edgeemitting semiconductor laser and a silicon micro-machining W-groove which has forty-five degree mirror-like oblique planes made by oxidation- smooth method. With the edge emitting semiconductor laser packaged on the middle of the W-groove, reflected light will be perpendicular to the incident light, that is, as a vertical emitting semiconductor laser. This vertical emitting structure with simplifying laser package has the advantage for automation and cost lower.en_US
dc.language.isozh_TWen_US
dc.subject雷射zh_TW
dc.subject封裝zh_TW
dc.title特殊的垂直放射雷射元件的封裝結構zh_TW
dc.titleNovel Package Vertical Structure of Emission Laseren_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
Appears in Collections:Thesis