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dc.contributor.authorLiang, S. W.en_US
dc.contributor.authorHsiao, Hsiang-Yaoen_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorXu, Luhuaen_US
dc.contributor.authorTu, K. N.en_US
dc.contributor.authorLai, Yi-Shaoen_US
dc.date.accessioned2014-12-08T15:08:08Z-
dc.date.available2014-12-08T15:08:08Z-
dc.date.issued2009-12-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-009-0913-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/6350-
dc.description.abstractA quantitative analysis of the nonuniform distribution of current density and nonuniform rate of electromigration has been carried out by measuring the movement of an array of diffusion markers. Tiny marker arrays were fabricated by focused ion beam on the polished surface of flip-chip solder joints near the anode to measure the electromigration rate. The marker velocity at the current-crowding region was found to be at least five times larger than at locations far from the region. Some of the markers in the low-current-density region possess negative velocities, indicating that backflow occurs during the electromigration. The backflow, in which the atomic flow is against the electron flow, is explained by a constant-volume model as well as the back-stress induced by electromigration.en_US
dc.language.isoen_USen_US
dc.subjectElectromigrationen_US
dc.subjectPb-free solderen_US
dc.titleNonuniform and Negative Marker Displacements Induced by Current Crowding During Electromigration in Flip-Chip Sn-0.7Cu Solder Jointsen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-009-0913-1en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume38en_US
dc.citation.issue12en_US
dc.citation.spage2443en_US
dc.citation.epage2448en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000272301900004-
dc.citation.woscount4-
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