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dc.contributor.author蕭澄秋en_US
dc.contributor.authorHsiao, Cheng-Chiuen_US
dc.contributor.author林清發en_US
dc.contributor.authorLin, Tsing-Faen_US
dc.date.accessioned2014-12-12T02:19:38Z-
dc.date.available2014-12-12T02:19:38Z-
dc.date.issued1997en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT863489042en_US
dc.identifier.urihttp://hdl.handle.net/11536/63515-
dc.description.abstract本篇論文乃在建立一個實驗用之燈源加熱,快速升溫,垂直單晶反應爐,藉以探討進氣所尋致的慣性力與晶圓加熱所造成的浮力之流場與熱傳。並對於反應爐內放置一薄銅板於晶圓下方所造成晶圓溫度均勻性的影響以及通過整流板(showerhead)之進氣所造成的影響加以實驗。更進一步,對於爐內由一單管垂直衝擊晶圓溫度之噴流所形成之流場加以詳細實驗。由目前得到的結果可發現加入銅板的確能有效地減少晶圓的不均勻性。除此之外,使用較細密孔的整流板(showerhead),其結果發覺爐內會得到較佳的流場分布。而對衝擊晶圓的噴流實驗中,發現由浮力所造成的渦流會圍繞於爐內晶圓的右邊軸。且當在較高的浮力比慣性力(buoyancy-to-inertia)之比時,發現會造成渦流的變形與不對稱性。最後,並會對在暫態過程中由原先的渦流而往外擴散形成的新渦流加以觀察。zh_TW
dc.description.abstractAn experimental lamp heated, rapid thermal, vertical single-wafer reactor was established to study the gas flow and heat transfer driven by the inertia of the inlet flow and the buoyancy due to the wafer heating. Effects of placing a thick copper plate beneath the wafer on the uniformity of the wafer temperature and effects of the showerhead on the resulting flow in the reaction chamber were examined. In particular, the flow patterns in the reactor resulting from a vertical gas jet impinging on the wafer were examined in detail. The results indicated that adding the copper plate can effectively reduce the nonuniformity of the wafer temperature. Besides, using a showerhead with finer holes in it results in a better flow distribution in the reactor. For a jet impinging on the wafer, the buoyancy induces a circular vortex roll surrounding the axis of the chamber right on the wafer. At high buoyancy-to -inertia ratio the vortex roll is highly deformed and nonaxisymmetric. Finally, the generation of new roll by splitting from the original roll was noted during the transient roll formation processes.en_US
dc.language.isoen_USen_US
dc.subject燈源加熱zh_TW
dc.subject晶圓溫度zh_TW
dc.title燈源加熱之垂直CVD反應爐內流場及晶圓溫度量測之研究zh_TW
dc.titleObservation of Gas Flow and Wafer Temperature Measurement in a Model Lamp Heated Vertical CVD Reactoren_US
dc.typeThesisen_US
dc.contributor.department機械工程學系zh_TW
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