標題: Chemical Vapor Deposition of TiSi Nanowires on C54 TiSi(2) Thin Film: An Amorphous Titanium Silicide Interlayer Assisted Nanowire Growth
作者: Lin, Huang-Kai
Cheng, Hsin-An
Lee, Chi-Young
Chiu, Hsin-Tien
應用化學系
Department of Applied Chemistry
公開日期: 24-Nov-2009
摘要: A C54-TiSi(2) film was grown on a Si substrate at 1073 K by low pressure chemical vapor deposition (LPCVD) employing titanium subchlorides TiCl(x)((g)), generated by reacting between TiCl(4(g)) and Ti((s)) at 1173 K, as the Ti source. Growth of titanium silicide (TiSi) nanowires (NWs; diameter 30-80 rim, length several micrometers) on a C54-TiSi(2) film was observed. Growth direction of the NWs was determined to be along the [010] axis. An amorphous titanium silicide interlayer was observed between the NWs and the C54-TiSi(2) film. This interlayer, probably existing as a quasi-liquid thin film during the growth, appears to be the key factor to assist the NW development. Field emission properties, turn-on field E(o) and field enhancement factor beta, of the vertically grown TiSi NWs were determined to be 5.25 V mu m(-1) and 876, respectively.
URI: http://dx.doi.org/10.1021/cm901726s
http://hdl.handle.net/11536/6411
ISSN: 0897-4756
DOI: 10.1021/cm901726s
期刊: CHEMISTRY OF MATERIALS
Volume: 21
Issue: 22
起始頁: 5388
結束頁: 5396
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