標題: | Increasing organic vertical carrier mobility for the application of high speed bilayered organic photodetector |
作者: | Tsai, Wu-Wei Chao, Yu-Chiang Chen, En-Chen Zan, Hsiao-Wen Meng, Hsin-Fei Hsu, Chain-Shu 應用化學系 物理研究所 光電工程學系 Department of Applied Chemistry Institute of Physics Department of Photonics |
關鍵字: | hole mobility;organic semiconductors;photodetectors;photodiodes;semiconductor thin films |
公開日期: | 23-Nov-2009 |
摘要: | The direct influence of the vertical carrier mobility on the frequency response of bilayered organic photodiodes (PDs) is investigated for the first time. With fullerene as the acceptor material, changing vertical hole mobility from 2.3x10(-5) to 2.8x10(-4) cm(2)/V s increases PD bandwidth from 10 to 80 MHz under a 4 V operation. The influence of deposition rate on vertical hole mobility of pentacene film is also discussed. Our results facilitate the application of bilayered organic PDs on the detection of very-high-frequency optical signals. |
URI: | http://dx.doi.org/10.1063/1.3263144 http://hdl.handle.net/11536/6415 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3263144 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 95 |
Issue: | 21 |
結束頁: | |
Appears in Collections: | Articles |
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