氮化鋁鈦擴散阻障層在銅金屬化製程中熱穩定性及特性之研究

Abstract

本論文以Ti-Al的靶材通入不同的氮流量進行Ti-Al-N薄膜的沉積。待沉積完後的Ti-Al-N薄膜再以物理氣相沉積的方式沉積Cu於Ti-Al-N薄膜上形成Cu/Ti-Al-N/Si結構。完成Cu/Ti-Al-N/Si結構後分別進行不同溫度的退火，以進行熱穩定性的探討。

This article presents the deposition of Ti-Al by reactive RF-magnetron sputtering on silicon substrate in various nitrogen flow rate, and carries out a ternary barrier film, Ti-Al-N, with different characteristics. Copper films are subsequently deposited onto Ti-Al-N by PVD without a vacuum break. After that, the samples were treated under various temperatures annealing to investigate Cu/Ti-Al-N/Si stack films and observe the thermal stability.