矽化鉬蕭基二極體紅外線感測元件之製程探討

Abstract

本研究旨在利用IC製程並以(111)矽晶片之異方蝕刻技術，研製一溫度感測元件。元件是將鉬蒸鍍在(111)的N型矽晶片上，在經過快速熱退火處理或高溫爐管退火後，使矽晶片與鉬反應形成一矽化鉬之薄膜，且此薄膜與矽晶片本身形成蕭基特接觸，在逆向偏壓下其電流隨溫度的變化率很大，如此可作成蕭基能障熱敏阻體 ，實驗所得的電流溫度係數為9~5％，而熱敏阻常數B值約為4360K。此外，利用特殊之矽(111)異方蝕刻技術，可將元件製作於一封閉浮板，成為一隔熱基板，所以可做成一非常靈敏的紅外線感測器。

This study uses the standard IC process and silicon anisotropic etching technique to fabricate an infrared sensor.This device uses n type silicon combined with Mo-silicide as a Schottky barrier thermistor (SBT),which has very large temperature dependenceof reverse-bias current.It is found that it has large Temperature coefficient of current density (TCJ) values of about 9%~5%,and thermistor constant B values of about 4360K.Besides, to increase the device sensitivity, based on silicon (111) anisotropic etching technique of micromaching, we can fabricate a floating membrane with SBT on it.