銦摻雜氮化鎵薄膜之深植能階研究

Abstract

本文主要是以深植能階暫態能譜量測法，來探討有機金屬化學氣相沈積法成長銦摻雜的氮化鎵薄膜之電性。在未摻雜之氮化鎵薄膜中，我們量測到兩個明顯的缺陷能階，經過計算得知其能階位置分別位於傳導帶下方0.149 eV與0.601 eV處，相關缺陷濃度分別為8.97×1013 cm-3 和8.49×1014 cm-3。當少量的銦原子摻雜到氮化鎵薄膜中時，可明顯地降低深植能階缺陷的濃度。事實上，原有的0.149 eV缺陷，在微量銦摻雜後幾乎完全消失，同時0.601 eV深植能階的缺陷，濃度也降低至1.43×1014 cm-3，降幅幾達一個數量級。

The effects of isoelectronic In-doping in GaN on their deep levels have been investigated. For undoped GaN film, two distinct deep levels were detected with activation energies of 0.149 eV and 0.601 eV below the conduction band, with trap concentrations of 8.97×1013 and 8.49×1014 cm-3, respectively. When the sample is lightly doped with In, we have found that the 0.149 eV trap is disappeared and the concentration of 0.601 eV trap is decreased significantly by approximately an order of magnitude. Our results indicate the use of In iso-doped method in GaN growth could effectively improve ideality factor, Schottky barrier height and reduce the deep-level defect concentrations.