標題: WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors
作者: Lu, Chung Yu
Hilt, Oliver
Lossy, Richard
Chaturvedi, Nidhi
John, Wilfred
Chang, Edward Yi
Wuerfl, Joachim
Trankle, Gunther
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Nov-2009
摘要: A new technique using WSiN film as a protective cap layer of the internal ohmic metallization scheme and the GaN surface was developed to improve the surface morphology of the contact of AlGaN/GaN high electron mobility transistors (HEMTs) After annealing, this layer was selectively removed by patterning and dry etching. Metal contact surfaces covered with WSiN preserved a good surface morphology and edge definition. Moreover, the devices have a saturation current of 1 A/mm and a maximum transconductance of 235 mS/mm When biased at 30 V, the output power density is 5 8 W/mm at 2 GHz These results indicate a damage-free process for the smooth ohmic contacts formation (C) 2009 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.48.111003
http://hdl.handle.net/11536/6531
ISSN: 0021-4922
DOI: 10.1143/JJAP.48.111003
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 48
Issue: 11
結束頁: 
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