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dc.contributor.authorLiang, Ching-Piaoen_US
dc.contributor.authorRao, Pei-Zongen_US
dc.contributor.authorHuang, Tien-Jienen_US
dc.contributor.authorChung, Shyh-Jongen_US
dc.date.accessioned2014-12-08T15:08:28Z-
dc.date.available2014-12-08T15:08:28Z-
dc.date.issued2009-11-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2009.2032013en_US
dc.identifier.urihttp://hdl.handle.net/11536/6539-
dc.description.abstractA 2.45/5.2 GHz dual-band Gilbert downconversion mixer with image rejection function is presented, which is implemented using the 0.18 mu m CMOS technology. The proposed differential dual-band image rejection circuitry is employed for the 2.45/5.2 GHz WLAN application to effectively diminish the dc power consumption and complexity of circuit design compared to the traditional Hartley or Weaver architectures. Moreover, the cross-connected pair consisted of NMOS and PMOS transistors in the proposed notch filter will further ameliorate the image rejection capability. The IC prototype achieves conversion gain of 10.5/11 dB, IIP3 of -4.9/-5.2 dBm for RF = 2.45/5.2 GHz and IF = 500 MHz while the image rejection ratio is better than 36/45 dB in the whole operation bandwidth.en_US
dc.language.isoen_USen_US
dc.subjectComplementary metal oxide semiconductor (CMOS)en_US
dc.subjectdual-band Gilbert mixeren_US
dc.subjectimage rejectionen_US
dc.titleA 2.45/5.2 GHz Image Rejection Mixer With New Dual-Band Active Notch Filteren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2009.2032013en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume19en_US
dc.citation.issue11en_US
dc.citation.spage716en_US
dc.citation.epage718en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000271481900014-
dc.citation.woscount2-
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